PBSS5350Z,135 datasheet

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Маркировка

PBSS5350Z,135
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS5350Z,135 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Single Dual Collector Current - Collector (ic) (max): 3A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 100MHz ID_COMPONENTS: 1949439 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 3 A Maximum Operating Frequency: 100 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 2W Power Dissipation: 2000 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 100 MHz DC Collector/Base Gain hfe Min: 200 at 500 mA at 2 V, 200 at 1 A at 2 V, 100 at 2 A at 2 V DC Current Gain hFE Max: 200 at 500 mA at 2 V Maximum Power Dissipation: 2000 mW Factory Pack Quantity: 4000 Part # Aliases: /T3 PBSS5350Z Other Names: 568-4171-2, 934056527135, PBSS5350Z /T3
Количество страниц

9 шт.
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87,55 KB